Fig. 1: Field- and strain-induced in-plane transport anisotropy in CsV3Sb5.
From: Correlated order at the tipping point in the kagome metal CsV3Sb5
a, Detailed setup of tri-directional resistance measurement and possible origin of in-plane anisotropy. b, Scanning electron microscopy (SEM) image of device S1. The hexagon of CsV3Sb5 is fabricated via focused-ion-beam technique with six symmetric contacts. The three equivalent a-directions of the Kagome plane are noted as a1, a2 and a3, respectively. c, Illustration of in-plane electric transport under different conditions. With the application of in-plane strain or out-of-plane magnetic field, the resistances measured along different directions, Ri (i = 1, 2, 3), become anisotropic. Here, I and V denote the applied current and the measured voltage, respectively. d, Temperature (T) dependence of tri-directional resistance for the nearly strain-free devices S1, S3 and S4 in zero field, device S2 under strain and device S3 in the presence of magnetic field (B = 9 T).
