Extended Data Fig. 3: Simplified band diagrams of MoS2 FGFETs.
From: Logic-in-memory based on an atomically thin semiconductor
a, Energy band diagrams of different materials comprising the FGFET before being brought into contact. EC and EV are the positions of the bottom of the conduction band and the top of the valence band, respectively. b, Programming of the floating-gate memory by electron injection into the floating gate with the application of a positive gate voltage (upper panel). Lower panel, accompanying positive shift in the threshold voltage. c, Erase operation with electron extraction from the floating gate under the application of a negative gate voltage (upper panel). Lower panel, accompanying negative shift in the threshold voltage.
