Extended Data Fig. 5: Calculated field-induced strains in different directions.
From: Atomically engineered interfaces yield extraordinary electrostriction
a. CGO20; b. ESB20; c. heterostructure (Λ = 2.33 nm). An electrical field was applied along the (100)-crystallographic direction. All lattice parameters were allowed to relax during the application of the electrical field. εxx, εxy, and εxz denote the strain developed along the X-, Y-, and Z-axis, respectively when the electric field is applied along with the X-axis. The Cartesian axes X, Y, and Z correspond to the (100), (01-1) and (011) crystallographic directions, respectively. Note that the lattices of CGO20, ESB20, and the heterostructure exhibit similar deformation in response to an electric field, that is, contract along the (100)-crystallographic direction and expand along with the (011) and (01-1)-crystallographic directions.
