Extended Data Fig. 1: Fabrication process.
From: Topological lattices realized in superconducting circuit optomechanics
a, b, Etching a trench in a silicon wafer (325 nm depth). c, Aluminum deposition of the bottom plate (100 nm). d, Patterning of Al. e, SiO2 sacrificial layer deposition (3 μm). f, CMP planarization. g, Landing on the substrate using IBE etching. h, Top Al layer deposition and patterning (200 nm). i, Releasing the structure using HF vapour. Owing to compressive stresses, the top plate will buckle up. j, At cryogenic temperatures, the drumhead shrinks and flattens owing to the temperature-induced tensile stress.
