Extended Data Fig. 3: Further characterizations on photocurrent localization profiles.
From: Monolithic silicon for high spatiotemporal translational photostimulation
a, Normalized photocurrent profiles of various Si-based devices under different light-stimulation spot sizes. Data are expressed as mean ± s.d. of N = 3 independent samples for each spot size and device configuration. b, Photocurrents at FWHM for different spot sizes. Data are expressed as mean ± s.d. of N = 3 independent samples for each spot size and device configuration. The Por-Si device showcases superior photocurrent resolution and a tunable FWHM in response to changes in light-spot size.
