Figure 4
From: Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
Effect of an increase in the microinclusion size on the Mie parameters. (a,b) Scattering efficiencies Q sca, (c,d) scattering anisotropy g, and, (e,f) absorption efficiencies Q abs for various sizes of Ge (left) and PbS (right) microinclusions. The vertical green arrows indicate the bandgap wavelength λ bg for the semiconductor materials. A general broadening of the spectral features in Q sca, Q abs and g is observed with an increase in the microinclusion size d.
