Figure 3 | Scientific Reports

Figure 3

From: Evaluation of the concentration of point defects in GaN

Figure 3

Dependence of PL quantum efficiency on the excitation intensity for PL bands in GaN. Sample H3 at 100 K. The lines are calculated using Eq. (3) with the following parameters: \(\alpha =1.2\times {10}^{5}\) cm−1, τ = 15 µs, \({\eta }_{0}=8\times {10}^{-4}\), and \(N=7\times {10}^{12}\) cm−3 for the UVL band, \(\tau =450\) µs, \({\eta }_{0}=9\times {10}^{-3}\), and \(N=2.4\times {10}^{14}\) cm−3 for the YL1 band, and τ = 1000 µs, \({\eta }_{0}=1.3\times {10}^{-2}\), and N = 2.4 × 1014 cm−3 for the RL1 band.

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