Figure 3
From: Evaluation of the concentration of point defects in GaN

Dependence of PL quantum efficiency on the excitation intensity for PL bands in GaN. Sample H3 at 100 K. The lines are calculated using Eq. (3) with the following parameters: \(\alpha =1.2\times {10}^{5}\) cm−1, τ = 15 µs, \({\eta }_{0}=8\times {10}^{-4}\), and \(N=7\times {10}^{12}\) cm−3 for the UVL band, \(\tau =450\) µs, \({\eta }_{0}=9\times {10}^{-3}\), and \(N=2.4\times {10}^{14}\) cm−3 for the YL1 band, and τ = 1000 µs, \({\eta }_{0}=1.3\times {10}^{-2}\), and N = 2.4 × 1014 cm−3 for the RL1 band.