Figure 1
From: High operating temperature in V-based superconducting quantum interference proximity transistors
Design and scanning electron micrograph (SEM) of the V-based SQUIPT. (a) Sketch of the V-based SQUIPT. An Al nanowire is embedded into a V-Al ring and an Al probe is tunnel-coupled to the middle of the wire. (b) False-color SEM of sample-A with an enlarged view centered on the junction region. In the SEM image the passive metal replicas deriving from the three-angle shadow-mask evaporation are also visible.
