Figure 4
From: High operating temperature in V-based superconducting quantum interference proximity transistors
Temperature behaviour of the electrical trasport in the V-based SQUIPT. (a) Current-voltage I(V b) characteristic curves measured at Φ = 0 for several increasing temperatures of the V-SQUIPT (sample-A). (b) Theoretical prediction for the curves shown in (a), obtained through a numerical calculation based on the model presented in the text. (c) and (d) Measured and calculated differential conductance dI/dV vs voltage bias for the same temperatures as in panel (a).
