Figure 3
From: Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications
Endurance of (a) Ag/PPX/ITO, (b) Cu/PPX/ITO and (c) Al/PPX/ITO memristors. Black and red points represent low- and high-resistance states, respectively. Pulse time was 100 ms; Uset = −Ureset = 5 V for (a), Uset = −Ureset = 4 V for (b) and Uset = 5 V, Ureset = −8 V for (c).
