Figure 2

(a) Ids − Vds curves for parallel and vertical (inset) conducting channels at various Vbg values from −60 V to 60 V. (b) Ids − Vbg curves for parallel and vertical (inset) conducting channels at various Vds values from 5 mV to 25 mV. (c) Schematic illustration of charge transport for parallel (i) and vertical (ii) conducting channels of MoS2 electronics, while the shading denotes the main path.