Figure 1

Proposed cryogenic memory architecture. Not-to-scale illustrations of (a) a SHE-MTJ device, (b) a hTron device and (c) a memory cell. (d) Schematic of the 4 × 4 memory array interfaced with external control circuitries by column and row drivers. The arrows indicate the current paths during the writing process of cell (2,2). (e) Micrograph of the memory array. (f) SEM image of cell (2,2) in the array.