Table 1 Comparisons of photovoltaic UV-C detectors with different device structures and channel layer growth methods.
Material structure | Device structure | Growth technique (Ga2O3) | TGrowth (°C) | Idark (A) | Iphoto (A) | Popt (μW/cm2), wavelength | Flexible | Refs. |
|---|---|---|---|---|---|---|---|---|
PEDOT:PSS /Ga2O3 | p–n | MOCVD | 860 | ~ 0.1 p | ~ 4 n | 1000, 254 nm | No | |
PEDOT:PSS /Ga2O3 nanowire | p–n | CVD | 1120 | < 0.1 p | – | –, 245 nm | No | |
Spiro-MeOTAD/Ga2O3 | p–n | MOCVD | 860 | 75 f. | 12 n | 80, 254 nm | No | |
ZnO/Ga2O3 microwire | n–n | CVD | 1200 | ~ 1.0 p | ~ 5.0 n | 1670, 251 nm | No | |
SiO2/Ga2O3 | MOS | MOCVD | 735 | ~ 2 f. | ~ 0.2 n | 30, 254 nm | No | |
Ni/Ga2O3 | Schottky | Sputtering | 750 | ~ 5 f. | ~ 9 p | 150, 254 nm | No | |
α/β Ga2O3 | Phase Junction | Chemical route | 700 | 1.72 n | 211 n | 3000, 254 nm | No | |
Au/Ga2O3 | MSM | Single crystal | – | 0.18 n | 2.7 n | 1780, 254 nm | No | |
Pt/Ga2O3 | MSM | PLD | 550 | 800 f. | 36 p | 75, 265 nm | Yes | This work |
