Figure 9
From: Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs
(a) Id—Vg curves of a three stacked Ge nanosheet and single-nanosheet P-FETs with Lch = 180 nm; the former has an enhanced ON current of ~ 2.3 times that of the latter owing to the stacked channels. (b) Id—Vg curves of a three stacked Ge nanosheet n-FET device.
