Table 1 Results of the triple Gaussian fit in Fig. 6 (right) from exposing the samples with a triple-alpha source, with the corresponding energies according to the source spectrum.

From: Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer

 

Source E\(_{kin}\)

5.245 MeV

5.486 MeV

5.902 MeV

Q\(_1\)

\(\sigma _1\)

Q\(_2\)

\(\sigma _2\)

Q\(_3\)

\(\sigma _3\)

1M

445.0 ± 0.1

7.9 ± 0.1

481.3 ± 0.1

7.8 ± 0.1

515.2 ± 0.1

7.6 ± 0.1

1G

415.9 ± 0.1

10.3 ± 0.1

450.2 ± 0.1

9.7 ± 0.1

481.7 ± 0.2

9.6 ± 0.2

  1. Charge distribution obtained with Sample-1 was not adjusted as it did not showcase the three energy peak distribution (see text). All charge (Q\(_i\)) and width (\(\sigma _i\)) units are in mV ns/50 \(\Omega \), and uncertainties are statistical only.