Figure 3
From: Solution-derived Ge–Sb–Se–Te phase-change chalcogenide films
(a) A strategy employing a combination of substrate cleaning, solution filtration, and aging processes toward the deposition of high-quality films. (b) In-situ GIXRD data of solution-derived Ge2Sb2Se4Te1 films with a DFT-simulated diffraction pattern as a reference. (c) Atomic percentages of constituent elements in Ge2Sb2Se5-xTex (x = 0.5, 0.6, and 0.7).
