Fig. 5
From: FIB-fabrication of superconducting devices based on Bi2Se3 junctions
Resistance versus temperature curves measured at I = 0.2 µA. (b) I-V characteristics measured at T = 0.8 K.
Fig. 5 | Scientific Reports
From: FIB-fabrication of superconducting devices based on Bi2Se3 junctions
Resistance versus temperature curves measured at I = 0.2 µA. (b) I-V characteristics measured at T = 0.8 K.
