Fig. 7
From: FIB-fabrication of superconducting devices based on Bi2Se3 junctions
(a) Magnetic field dependence of the critical current \(\:{I}_{C}\) at \(\:T=0.8\:K\) for sample C. (b) Magnetic field dependence of the voltage and the critical current in the low magnetic field region at \(\:T=0.8\:K\).
