Fig. 8
From: FIB-fabrication of superconducting devices based on Bi2Se3 junctions
(a) SEM micrograph of sample C after removing one of the junctions by FIB. (b) I-V characteristics before (Loop) and after (Single junction) the removal of one of the junctions measured at \(\:T=0.8\:K\). (c) Magnetic field dependence of \(\:{I}_{C}\) at \(\:T=0.8\:K\) before (Loop) and after (Single junction) the removal of one of the junctions.
