Fig. 8 | Scientific Reports

Fig. 8

From: The characteristics and polarization effects in AlInGaN barrier GaN MISHEMT with various compositions of group III elements

Fig. 8

3D plot comparison of AlxInyGazN MISHEMT with AlN spacer layer characteristics as a function of Al and In composition, (a) Drain current at VG=1 V and VD=20 V, (b) sheet charge density (ns) at VG = 0 V and VD = 0 V, (c) 2DEG electron density, (d) Threshold Voltage, (e) Total polarization, and (f) Conduction band bending for various Al and In compositions, for each Al composition, the In composition is increased from 0.03 to 0.19 with an increment of 0.02.

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