Fig. 1: Van der Waals epitaxy of h-GaTe on Sb passivated Si(111). | npj 2D Materials and Applications

Fig. 1: Van der Waals epitaxy of h-GaTe on Sb passivated Si(111).

From: Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase

Fig. 1

a Supercell bilayers (BLs) GaTe in the hexagonal phase with β stacking (h-GaTe) and monoclinic phase (m-GaTe), and vertical heterostructure by combining monolayers (MLs) of the two phases together (hetero-BL). b In-plane lattice spacing evolution as a function of time during the MBE growth. The lattice parameter is calculated from the streak distance in the in-situ RHEED patterns acquired perpendicular to the Si\(\langle 11\bar{2}\rangle\) direction. The layer thickness dependency is obtained from the specular spot RHEED oscillations (see Supplementary Fig. 1). The inset shows the RHEED pattern from BL h-GaTe. c AFM height image of the BL h-GaTe measured after taking it out of the MBE chamber without capping layer. Scale bar is 2 μm. The zoomed in AFM in the inset (scale bar is 100 nm) shows the profile highlighted in red of a discontinuity region in the GaTe layer.

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