Figure 4
High index dielectric material based compensation of the polarization dependent absorption of the NbN nanowire.
Distribution of the electric field amplitude for cases in which the NbN nanowire is placed in a vacuum (a), the NbN nanowire has left- and right-side spaces filled with Si (b), the NbN nanowire has a 20-nm thick wrapping layer composed of Si (c). The distribution of the amplitude of Ex is along the middle line (y = 0) of the NbN nanowire (d).
