Here, we present a pressure-modulated heterojunction photodiode composed of n-type multilayer MoS2 and p-type GaN film by piezo-phototronic effect. Under the illumination of 365 nm incident light, strong photo-response is observed with a response time and recovery time of ~66 and 74 ms, respectively. Upon the pressure of 258 MPa, the photoresponsivity of this photodiode can be enhanced for about 3.5 times by piezo-phototronic effect arising from the GaN film. Due to the lowered junction barrier upon applying an external pressure (strain), more photo-generated carriers can successfully pass through the junction area without recombination, resulting in the enhancement effect.
- Fei Xue
- Leijing Yang
- Zhong Lin Wang