Gate-all-round field effect transistors (FETs) with channels fabricated from highly stacked nanowires can enhance the drive current of such devices for a fixed footprint. Chen, Liu, and colleagues fabricated FETs with as many as 16 highly stacked Ge0.95Si0.05 nanowires and 12 nanowires without parasitic channels using wet etching.
- Yu-Rui Chen
- Yi-Chun Liu
- C. W. Liu
