Hafnium dioxide is of technological interest as it is compatible with silicon; however, previous work indicates that a nanometre grain size is required to generate ferroelectricity. Here ferroelectric Y-doped HfO2 thin films with high crystallinity are grown with large crystal grain sizes, indicating that ferroelectricity is intrinsic.
- Yu Yun
- Pratyush Buragohain
- Xiaoshan Xu