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Refrigeration devices based on giant magnetocaloric materials are hampered by an irreversible caloric effect associated with large magnetic hysteresis. Here, Liu et al. report a multicaloric refrigeration cycle in FeRh thin films coupled to a ferroelectric BaTiO₃substrate, demonstrating reversibility and conversion of hysteretic losses.

Electrostrain, an important value for actuators, larger than 1% is only achieved in single crystals. Here, a pseudo-ternary polycrystalline ferroelectric with spontaneous lattice strain has 1.3% electrostrain, which may enable cheaper piezoelectrics.

Here, authors develop an in-memory differentiator using a 40×40 array of ferroelectric capacitors. This device efficiently performs real-time differential computation and motion extraction, demonstrating low energy consumption and high operational frequency, with potential applications in edge computing.

The generation of strain in a material using light is of relevance for ultrasonic devices. Here, the authors observe a large, ultrafast photo-induced shear strain in BiFeO₃at room temperature, suggesting promising uses of such oxides for high-frequency acoustic devices.

Control over topological antiferromagnetic entities is achieved at room temperature in multiferroic nanodevices using an electric field that induces magnetoelectric coupling to ferroelectric centre states.

It is shown that a phase change to a denser crystal structure in PbTiO₃ nanowires creates a negative-pressure stress state, which is effective in enhancing ferroelectric performance.

One of the most innovative possibilities offered by oxides is the use of heat currents for computational purposes. Towards this goal, phase-change oxides, including ferroelectrics, ferromagnets and related materials, could reproduce sources, logic units and memories used in current and future computing schemes.

Designing efficient high-density crossbar arrays are nowadays highly demanded for many artificial intelligence applications. Here, the authors propose a two-terminal ferroelectric fin diode non-volatile memory in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes with high performance and easy fabrication process

A first-order ferroelectric phase transition is driven supercritically in multilayer capacitors of PbSc_0.5Ta_0.5O₃, enabling an electrocaloric response of 5.5 K near room temperature.

Electrically driven acousto-optic light modulators are limited to frequencies of a few hundred megahertz and are typically no smaller than a few micrometres. Here, the authors demonstrate gigahertz acousto-optic conversion of light polarization in a region of a few nanometres using pulsed laser stimulation of a ferroelectric.

Typically, magnetic phenomena result from the spontaneous order of the sublattices. Here, the cross-talk of two magnetic ions gives rise to an intrinsic, yet non-spontaneous ordering and manifests as emergent strong spin–phonon coupling in SmFeO₃.

Ferroelectric hafnia occurs only in a thin-film orthorhombic phase that needs wake-up cycling to induce ferroelectricity. Here, by growing thin-film Hf_0.5Zr_0.5O₂ under strain, a polar rhombohedral phase is achieved that does not require cycling.