Search

The authors reveal that interfacial dead layers in ferroelectric ScAlN originate from nitrogen vacancies and strain, highlighting their critical role in unlocking the full potential of nitride ferroelectrics for advanced device architectures.

Spontaneous polarization leads to various functionalities promising for future information storage and electronics. Here, the authors propose the concept of ferrovalley material with spontaneous valley polarization in monolayer 2H-VSe₂.

The authors provide experimental evidence for giant polarization in wurtzite III-nitrides, establishing a unified framework for understanding and engineering polarization in these materials and their functional device architectures.

The authors reveal a complex polarization network in twisted bilayer h-BN, featuring edge polarization topology and sliding ferroelectricity, driven by the interplay of ferroelectric and piezoelectric effects.

Comparing to the electrochemical energy-storage technologies, the energy density of the dielectric capacitors is generally low. Here, the author predicts a conceptional phase of “metaparaelectric” in III nitride compounds (Al, Sc, B) N to improve energy density.

Manipulation of controllable polarization evolutions is a big challenge. The authors fabricate the irregular moirés, identifying three distinct types of moiré domains with different patterns, modulating them by external mechanical force disturbing.

In this work we report the electrical polarization can be induced by composition-graded LaAlO₃-SrTiO₃ solid solution. The analysis indicates that the induced polarization is attributed to the flexoelectric effect in the compositional gradient system. By a suitable combination of compositional gradient in geometry, a local conduction can be created and manipulated, delivering a new approach to obtain unveiled properties. delivering a new pathway to acquire material genome based on material inhomogeneity.

The authors study the light-induced spin current observed in W/Y₃Fe₅O₁₂ heterojunctions, elucidating the photo-generated spin current, rather than light-thermally induced spin current, by photon-magnon interaction.

Despite enormous efforts by many research groups, Sr₂IrO₄ was found to stay remarkably insulating in thin film form. Now, a high-pressure oxygen annealing treatment on the Sr₂IrO₄ thin film realized the long-sought metallicity for the first time. An emerging transport phase diagram was deduced from the experiment that features an interplay between two states: the robust insulating state, which is likely dominated by the defect scattering effect of planar oxygen vacancies O(2), and the new metallic state, which likely reflects an intrinsic bulk-like property of the IrO₂ planes with effective electron doping due to apical oxygen vacancies O(1).

It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic approach for fabricating twisted lateral homostructures with tunable crystal orientation, epitaxial constrain, and phase stability.

Whether it is possible to achieve polarization inversion in a ferroelectric without any energy consumption is an open question. Here, the authors demonstrate an energy-free approach to control the polarization state of CuInP₂S₆, a typical room-temperature van der Waals layered ferroelectric.

Ferroelectric reliability must be solved prior to practical non-volatile electronic devices based on magnetoelectric multiferroics. Here, Hsiehet al. report a long lasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal.

Electrical control of the spin degree of freedom has enabled various vital applications in modern electronic devices, ranging from magnetoelectronics and spintronics to high-frequency devices. We demonstrate a new approach to ‘write’ enhanced magnetization in a single-phase multiferroic thin film by the application of an electric field. The induced magnetization can be controlled with nanoscopic precision via the assistance of scanning probe techniques, thus offering high potential for use in multifunctional, low power consumption and green nanoelectronics.