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Showing 1–4 of 4 results
Advanced filters: Author: Ghidewon Arefe Clear advanced filters

  • In heterostructures of the transition metal dichalcogenides MoS2 and WSe2, atomically thin p–n junctions are created that show gate-tunable rectifying and photovoltaic behaviour mediated by tunnelling-assisted interlayer recombination.

    • Chul-Ho Lee
    • Gwan-Hyoung Lee
    • Philip Kim
    Research
    Nature Nanotechnology
    Volume: 9, P: 676-681

  • Electronic bandgap tuning in semiconductors enables key functionalities in solid-state devices. Here, the authors present a strategy to control the bandgap of atomically thin WS2 and WSe2semiconductors via manipulation of the surrounding dielectric environment rather than by modifications of the materials themselves.

    • Archana Raja
    • Andrey Chaves
    • Alexey Chernikov
    ResearchOpen Access
    Nature Communications
    Volume: 8, P: 1-7

  • Thermal scanning probe lithography can be used to pattern metal electrodes in direct contact with monolayer MoS2, creating field-effect transistors that exhibit vanishing Schottky barrier heights, high on/off ratios of 1010, no hysteresis, and subthreshold swings as low as 64 mV per decade.

    • Xiaorui Zheng
    • Annalisa Calò
    • Elisa Riedo
    Research
    Nature Electronics
    Volume: 2, P: 17-25