Nature Search

Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN

Here, the authors explore the blue photoluminescence signal arising from the interface between graphene and h-BN arranged in in-plane heterostructures, and fabricate a blue light emitting device utilizing the heterojunction as the emitting layer.

Gwangwoo Kim
Kyung Yeol Ma
Hyeon Suk Shin
ResearchOpen Access23 Oct 2020
Nature Communications

Volume: 11, P: 1-6
Reply to: On the measured dielectric constant of amorphous boron nitride

Seokmo Hong
Min-Hyun Lee
Hyeon Suk Shin
Research03 Feb 2021
Nature

Volume: 590, P: E8-E10
Ultralow-dielectric-constant amorphous boron nitride

Thin films of amorphous boron nitride are mechanically and electrically robust, prevent diffusion of metal atoms into semiconductors and have ultralow dielectric constants that exceed current recommendations for high-performance electronics.

Seokmo Hong
Chang-Seok Lee
Hyeon Suk Shin
Research24 Jun 2020
Nature

Volume: 582, P: 511-514
A scalable ferroelectric non-volatile memory operating at 600 °C

A non-volatile memory device that is based on an aluminium scandium nitride (Al_0.68Sc_0.32N) ferroelectric diode can operate at temperatures of up to 600 °C.

Dhiren K. Pradhan
David C. Moore
Deep Jariwala
Research29 Apr 2024
Nature Electronics

Volume: 7, P: 348-355
Author Correction: Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Gwangwoo Kim
Sung-Soo Kim
Hyeon Suk Shin
Amendments and CorrectionsOpen Access25 Feb 2019
Nature Communications

Volume: 10, P: 1
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

A large array of ferroelectric field-effect transistors with record memory windows, ON/OFF ratios and ON-current density is presented at ~80 nm channel length.

Kwan-Ho Kim
Seyong Oh
Deep Jariwala
Research22 May 2023
Nature Nanotechnology

Volume: 18, P: 1044-1050
Confinement of excited states in two-dimensional, in-plane, quantum heterostructures

Here, the authors observe the lateral confinement of excitons in triangular MoSe₂ quantum dots inside a continuous matrix of monolayer WSe₂. They measure size-dependent exciton confinement in the quantum dots with low-temperature exciton blue shift, and further observe single-photon emission from the smallest dots.

Gwangwoo Kim
Benjamin Huet
Deep Jariwala
ResearchOpen Access28 Jul 2024
Nature Communications

Volume: 15, P: 1-10
Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

The possibility to combine planar and van der Waals heterostructures holds great promise for nanoscale electronic devices. Here, the authors report an innovative method to synthesise embedded graphene quantum dots within hexagonal boron nitride matrix for vertical tunnelling single electron transistor applications.

Gwangwoo Kim
Sung-Soo Kim
Hyeon Suk Shin
ResearchOpen Access16 Jan 2019
Nature Communications

Volume: 10, P: 1-9
Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)

Using a chemical vapour deposition method, it is possible to epitaxially grow wafer-scale single-crystal trilayers of hexagonal boron nitride—an important dielectric for 2D materials—on Ni (111) foils by boron dissolution.

Kyung Yeol Ma
Leining Zhang
Hyeon Suk Shin
Research01 Jun 2022
Nature

Volume: 606, P: 88-93
Tailoring exciton dynamics in TMDC heterobilayers in the ultranarrow gap-plasmon regime

Mahfujur Rahaman
Gwangwoo Kim
Deep Jariwala
ResearchOpen Access11 Sept 2023
npj 2D Materials and Applications

Volume: 7, P: 1-7

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