There is much interest in graphene for applications in ultrahigh-speed radio-frequency electronics, but conventional device fabrication processes lead to significant defects in graphene. Here a new way of fabricating high-speed graphene transistors is described. A nanowire with a metallic core and insulating shell is placed as the gate electrode on top of graphene, and source and drain electrodes are deposited through a self-alignment process, causing no appreciable damage to the graphene lattice.
- Lei Liao
- Yung-Chen Lin
- Xiangfeng Duan