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Showing 1–50 of 1602 results

Advanced filters: Author: Li Gan Clear advanced filters

Experiment study on Ma-Xing-Shi-Gan-Tang (MXSGT) and its decomposed recipes on anti-influenza virus A

Wen Gao
Jiyang Li
Hai Huang
ResearchOpen Access08 Sept 2008
Nature Precedings

P: 1
Nitrate reduction to ammonia catalyzed by GaN/Si photoelectrodes with metal clusters

This study presents a stable and efficient photoelectrochemical system for nitrate reduction to ammonia using metal catalysts on GaN/Si photoelectrodes, offering valuable insights into catalyst design for sustainable ammonia production driven by solar energy.

Wan Jae Dong
Jan Paul Menzel
Zetian Mi
ResearchOpen Access10 Apr 2025
Nature Communications

Volume: 16, P: 1-11
Unveiling interfacial dead layer in wurtzite ferroelectrics

The authors reveal that interfacial dead layers in ferroelectric ScAlN originate from nitrogen vacancies and strain, highlighting their critical role in unlocking the full potential of nitride ferroelectrics for advanced device architectures.

Jinlin Wang
Yun-Qin Li
Xinqiang Wang
ResearchOpen Access02 Jul 2025
Nature Communications

Volume: 16, P: 1-10
Surface-hydrogenated CrMnO_x coupled with GaN nanowires for light-driven bioethanol dehydration to ethylene

Light-driven bioethanol dehydration presents a promising route for sustainable ethylene production. This study unveils a surface hydrogen-replenishment mechanism facilitating ethanol dehydration on GaN nanowires with surface-hydrogenated CrMnOx, achieving an ethylene production rate of 1.78 mol·g_cat⁻¹·h⁻¹.

Zhouzhou Wang
Haotian Ye
Baowen Zhou
ResearchOpen Access24 Jan 2025
Nature Communications

Volume: 16, P: 1-11
Utilizing full-spectrum sunlight for ammonia decomposition to hydrogen over GaN nanowires-supported Ru nanoparticles on silicon

The author report a Ru NPs/GaN NWs nanoarchitecture on Si for utilizing full spectrum to drive efficient and robust photothermal H₂ production from NH₃ with a high turnover number of >3,400,750 over 400 h.

Jinglin Li
Bowen Sheng
Baowen Zhou
ResearchOpen Access27 Aug 2024
Nature Communications

Volume: 15, P: 1-11
Contactless Braille sensing based on GaN optical devices integrated with epoxy lenses

Hongyu Cheng
Jiahao Yin
Kwai Hei Li
ResearchOpen Access09 Apr 2025
Microsystems & Nanoengineering

Volume: 11, P: 1-9
Experimental determination of giant polarization in wurtzite III-nitride semiconductors

The authors provide experimental evidence for giant polarization in wurtzite III-nitrides, establishing a unified framework for understanding and engineering polarization in these materials and their functional device architectures.

Haotian Ye
Ping Wang
Xinqiang Wang
ResearchOpen Access24 Apr 2025
Nature Communications

Volume: 16, P: 1-10
Database construction and remodeling method on traditional Yi nationality patterns of China with GAN model

Kaining Meng
Hengyi Li
Lu He
ResearchOpen Access17 May 2025
npj Heritage Science

Volume: 13, P: 1-13
Photosynthesis of CH₃OH via oxygen-atom-grafting from CO₂ to CH₄ enabled by AuPd/GaN

The direct co-conversion of CH₄ and CO₂ into valuable chemicals has been a longstanding scientific pursuit. Here, the authors present a photo-driven process that reforms these greenhouse gases together to generate CH₃OH and CO over AuPd/GaN.

Hui Su
Jing-Tan Han
Chao-Jun Li
ResearchOpen Access31 Jul 2024
Nature Communications

Volume: 15, P: 1-9
Blocking the reverse reactions of overall water splitting on a Rh/GaN–ZnO photocatalyst modified with Al₂O₃

The overall water splitting performance of semiconductor photocatalysts is often limited by recombination reactions occurring at the surface of metallic co-catalysts. Here, the authors demonstrate how the controlled deposition of aluminium oxide species on a Rh co-catalyst can strongly inhibit this phenomenon and enhance the performance of GaN–ZnO photocatalyst.

Zheng Li
Rengui Li
Can Li
Research12 Jan 2023
Nature Catalysis

Volume: 6, P: 80-88
Silicon orientations to grow semi-polar AlN

To mitigate the lattice mismatch between GaN and Si in LEDs, AlN layers can be used as intermediary buffers. Here the authors identify a stable Si(320)/AlN interface with excellent thermal conductance using machine-learning-based structure predictions.

Ji-Li Li
Ye-Fei Li
Zhi-Pan Liu
ResearchOpen Access08 May 2025
Nature Communications

Volume: 16, P: 1-6
A low switching loss GaN trench MOSFET design utilizing a triple-shield structure

Yihang Qiu
Li Wei
ResearchOpen Access02 Jan 2025
Scientific Reports

Volume: 15, P: 1-11
WSTF nuclear autophagy regulates chronic but not acute inflammation

During chronic but not acute inflammation, chromatin remodelling is influenced by nuclear autophagy through WSTF interaction with ATG8 in the nucleus, leading to WSTF nuclear export and its subsequent degradation.

Yu Wang
Vinay V. Eapen
Zhixun Dou
Research02 Jul 2025
Nature

P: 1-10
A CE-GAN based approach to address data imbalance in network intrusion detection systems

Yang Yang
Xiaoyan Liu
Tianyun Luan
ResearchOpen Access06 Mar 2025
Scientific Reports

Volume: 15, P: 1-19
Biomimetic hair-assisted GaN optical devices for bidirectional airflow detection

Tianyu Ye
Jian Chen
Kwai Hei Li
ResearchOpen Access08 Nov 2024
Microsystems & Nanoengineering

Volume: 10, P: 1-10
Rapid-response, low-detection-limit, positive-negative air pressure sensing: GaN chips integrated with hydrophobic PDMS films

Sizhe Gui
Binlu Yu
Kwai Hei Li
ResearchOpen Access01 Nov 2024
Microsystems & Nanoengineering

Volume: 10, P: 1-9
A modified generative adversarial networks method for assisting the diagnosis of deep venous thrombosis complications in stroke patients

Ying Wang
Kaipeng Wang
Xueping Li
ResearchOpen Access01 Jul 2025
Scientific Reports

Volume: 15, P: 1-13
Gaseous molecules-mediated electrochemical exfoliation of halogenated MXenes and its boosting in wear-resisting tribovoltaic devices

This work demonstrates an efficient electrochemical exfoliation approach to achieve high recovery rate for few-layered halogenated MXenes by leveraging gaseous propylene molecules as ‘physical scissors’, to enable advanced tribovoltaic nanogenerators.

Qi Fan
Minghua Chen
Kun Liang
ResearchOpen Access30 May 2025
Nature Communications

Volume: 16, P: 1-11
Acceptorless cross-dehydrogenative coupling for C(sp³)-H heteroarylation mediated by a heterogeneous GaN/ketone photocatalyst/photosensitizer system

Cross-dehydrogenative coupling is an efficient route for C–C bond formation by direct C–H functionalization, however, this protocol usually requires stoichiometric oxidants under harsh reaction conditions. Here, the authors report a cross-dehydrogenative Minisci-alkylation using a heterogeneous Rh₂O₃/GaN photocatalyst and a benzophenone photosensitizer under oxidant-free conditions.

Hyotaik Kang
Lida Tan
Chao-Jun Li
ResearchOpen Access01 Sept 2023
Communications Chemistry

Volume: 6, P: 1-9
Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy

Heng Li
Hui-Yu Cheng
Yu-Ming Chang
ResearchOpen Access30 Mar 2017
Scientific Reports

Volume: 7, P: 1-7
Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs

Fangzhu Xiong
Jie Sun
Xuan Li
ResearchOpen Access19 Oct 2023
npj 2D Materials and Applications

Volume: 7, P: 1-7
Whispering-Gallery Mode Lasing in a Floating GaN Microdisk with a Vertical Slit

Gangyi Zhu
Jiaping Li
Yongjin Wang
ResearchOpen Access14 Jan 2020
Scientific Reports

Volume: 10, P: 1-7
Interface engineering of Ta₃N₅ thin film photoanode for highly efficient photoelectrochemical water splitting

Solar-to-fuel energy conversion requires well-designed materials properties to ensure favorable charge carrier movement. Here, authors employ interface engineering of Ta₃N₅ thin film to enhance bulk carrier separation and interface carrier injection to improve the water-splitting efficiency.

Jie Fu
Zeyu Fan
Yanbo Li
ResearchOpen Access07 Feb 2022
Nature Communications

Volume: 13, P: 1-9
Study of equivalent circuit of GaN based laser chip and packaged laser

Junfei Wang
Junhui Hu
Chao Shen
ResearchOpen Access18 May 2024
Scientific Reports

Volume: 14, P: 1-9
Using U-Net convolutional neural network to model pixel-based electrostatic potential distributions in GaN power MIS-HEMTs

Bang-Ren Chen
Yu-Sheng Hsiao
Tian-Li Wu
ResearchOpen Access08 Apr 2024
Scientific Reports

Volume: 14, P: 1-8
Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths

Changfu Li
Ziwu Ji
Xiangang Xu
ResearchOpen Access10 Nov 2017
Scientific Reports

Volume: 7, P: 1-8
A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Wenliang Wang
Haiyan Wang
Guoqiang Li
ResearchOpen Access22 Apr 2016
Scientific Reports

Volume: 6, P: 1-11
Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Wenliang Wang
Weijia Yang
Guoqiang Li
ResearchOpen Access13 Nov 2015
Scientific Reports

Volume: 5, P: 1-12
Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

Tongbo Wei
Jiankun Yang
Shoushan Fan
ResearchOpen Access24 Jun 2016
Scientific Reports

Volume: 6, P: 1-8
High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

Weihuang Yang
Jinchai Li
Junyong Kang
ResearchOpen Access05 Jun 2014
Scientific Reports

Volume: 4, P: 1-5
Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure

Jiyuan Zheng
Lai Wang
Qian Li
ResearchOpen Access24 Oct 2016
Scientific Reports

Volume: 6, P: 1-8
Selective conversion of methane to cyclohexane and hydrogen via efficient hydrogen transfer catalyzed by GaN supported platinum clusters

Lida Tan
Hui Su
Chao-Jun Li
ResearchOpen Access01 Nov 2022
Scientific Reports

Volume: 12, P: 1-8
Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System

Rong Huang
Fangsen Li
Hui Yang
ResearchOpen Access04 Jun 2018
Scientific Reports

Volume: 8, P: 1-7
Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection

Jinjian Zheng
Shuiqing Li
Junyong Kang
ResearchOpen Access04 Dec 2015
Scientific Reports

Volume: 5, P: 1-8
High spectral response of self-driven GaN-based detectors by controlling the contact barrier height

Xiaojuan Sun
Dabing Li
Zhiwei Zhang
ResearchOpen Access17 Nov 2015
Scientific Reports

Volume: 5, P: 1-7
Investigation on the corrosive effect of NH₃ during InGaN/GaN multi-quantum well growth in light emitting diodes

J. Yang
D. G. Zhao
H. Yang
ResearchOpen Access21 Mar 2017
Scientific Reports

Volume: 7, P: 1-7
Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In_0.17Al_0.83N/GaN heterostructures

Jiaming Wang
Fujun Xu
Bo Shen
ResearchOpen Access06 Oct 2014
Scientific Reports

Volume: 4, P: 1-5
Anisotropically biaxial strain in non-polar (112–0) plane In_xGa_1−xN/GaN layers investigated by X-ray reciprocal space mapping

Guijuan Zhao
Huijie Li
Zhanguo Wang
ResearchOpen Access03 Jul 2017
Scientific Reports

Volume: 7, P: 1-7
Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

Ye Yu
Tao Wang
Yuantao Zhang
ResearchOpen Access03 Jun 2021
Light: Science & Applications

Volume: 10, P: 1-8
Thermoelectric coupling effect in BNT-BZT-xGaN pyroelectric ceramics for low-grade temperature-driven energy harvesting

Pyroelectric energy harvesting has received increasing attention due to its ability to convert low-grade waste heat into electricity. Here, authors report an enhanced thermoelectric coupling BNT-BZT-xGaN pyroelectric energy harvester by facilitating resonance vibration between Ga and Ti, O atoms.

Meng Shen
Kun Liu
Kui Yao
ResearchOpen Access30 Nov 2023
Nature Communications

Volume: 14, P: 1-11
M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes

Fan Ye
Yiyang Wang
Rong Zhang
ResearchOpen Access14 Jul 2023
Scientific Reports

Volume: 13, P: 1-8
Bayesian deep-learning structured illumination microscopy enables reliable super-resolution imaging with uncertainty quantification

The study proposes BayesDL-SIM, a Bayesian deep learning framework for structured illumination super-resolution microscopy. It improves reconstruction fidelity while enhancing the reliability of imaging results by quantifying uncertainties.

Tao Liu
Jiahao Liu
Shan Tan
ResearchOpen Access30 May 2025
Nature Communications

Volume: 16, P: 1-12
Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation

Matthias Daeumer
Jae-Hyuck Yoo
Ted A. Laurence
ResearchOpen Access02 Jan 2025
Scientific Reports

Volume: 15, P: 1-8
Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy

Yanfei Zhao
Hongwei Gao
Hui Yang
ResearchOpen Access18 Nov 2019
Scientific Reports

Volume: 9, P: 1-7
Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer

Hongpo Hu
Shengjun Zhou
Haohao Xu
ResearchOpen Access05 Mar 2019
Scientific Reports

Volume: 9, P: 1-9
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

Dingyu Ma
Xin Rong
Xinqiang Wang
ResearchOpen Access18 Apr 2017
Scientific Reports

Volume: 7, P: 1-6
Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots

T. N. Lin
M. R. Inciong
C. H. Chiu
ResearchOpen Access18 Mar 2016
Scientific Reports

Volume: 6, P: 1-9
All-nitride Al_xGa_1−xN:Mn/GaN distributed Bragg reflectors for the near-infrared

Giulia Capuzzo
Dmytro Kysylychyn
Alberta Bonanni
ResearchOpen Access15 Feb 2017
Scientific Reports

Volume: 7, P: 1-9
Luminescence signature of free exciton dissociation and liberated electron transfer across the junction of graphene/GaN hybrid structure

Jun Wang
Changcheng Zheng
Shijie Xu
ResearchOpen Access08 Jan 2015
Scientific Reports

Volume: 5, P: 1-6
Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

Guijuan Zhao
Lianshan Wang
Zhanguo Wang
ResearchOpen Access10 Feb 2016
Scientific Reports

Volume: 6, P: 1-10

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