A photovoltaic device based on a high-work-function metal/single-walled carbon nanotube (SWNT)/low-work-function metal hybrid junction was constructed to generate a strong built-in electric field in the SWNT for efficiently separating photogenerated electron-hole pairs. In the dark, the device behaved as a gate-dependent Schottky diode, with a high rectification ratio (Iforward/Ireverse) of >103 achieved for the device fabricated with an 1.4-nm-diameter SWNT. Under monochromatic illumination, this device exhibited an open-circuit voltage of 0.15 V and a high quantum efficiency of ~75%. It was found that the SWNT diameter had an important effect on the device characteristics.
- Changxin Chen
- Tiening Jin
- Yafei Zhang
