2D semiconductors are promising candidates for next-generation electronics, but the realization of competitive 2D p-type transistors remains challenging. Here, the authors report the characterization of nitric-oxide-doped monolayer and bilayer WSe2 p-type transistor arrays, showing on-state currents up to 300–448 μA/μm, contact resistance down to 390–875 Ω·μm and on/off ratios of ~ 106−109.
- Hao-Yu Lan
- Chih-Pin Lin
- Zhihong Chen