The transfer of 2D semiconductor films remains a challenging step in the fabrication of industry-compatible 2D electronics. Here, the authors report a method based on a Se intermediate layer to facilitate the transfer of wafer-scale MoS2 monolayers with nearly 100% film intactness and superior surface/interface cleanness, leading to an improved electrical performance of the devices.
- Xingchao Zhang
- Lanying Zhou
- Guangyu Zhang
