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Showing 1–16 of 16 results
Advanced filters: Author: Tibor Grasser Clear advanced filters

  • These prototype processors made from atomically thin materials offer a glimpse into a post-silicon-transistor future, but scaling challenges remain.

    • Michael Waltl
    • Tibor Grasser
    News & Views
    Nature
    Volume: 642, P: 312-313

  • The two-dimensional semiconductor Bi2O2Se can be oxidized to create an atomically thin layer of Bi2SeO5 that can be used as the insulator in scaled field-effect transistors.

    • Yury Yu. Illarionov
    • Theresia Knobloch
    • Tibor Grasser
    News & Views
    Nature Electronics
    Volume: 3, P: 442-443

  • Room-temperature wafer-scale thermal evaporation of 20 different polycrystalline rare-earth-metal fluoride films for their use in 2D transistors is demonstrated.

    • Tibor Grasser
    • Michael Waltl
    • Theresia Knobloch
    News & Views
    Nature Nanotechnology
    Volume: 19, P: 880-881

  • This study demonstrates how point defects in 2D semiconductors can be harnessed for neuromorphic computing. By using random telegraph noise in WSe2 field-effect transistors, the researchers improve inference accuracy of noise-inflicted medical images.

    • Harikrishnan Ravichandran
    • Theresia Knobloch
    • Saptarshi Das
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-11

  • Metal gate electrodes with a high cohesive energy—platinum and tungsten—can be used to mitigate leakage currents and premature dielectric breakdown across chemical vapour deposition-grown multilayer hexagonal boron nitride, allowing the material to be used as a gate dielectric in two-dimensional-materials-based transistors.

    • Yaqing Shen
    • Kaichen Zhu
    • Mario Lanza
    Research
    Nature Electronics
    Volume: 7, P: 856-867

  • Inorganic molecular crystal films of antimony trioxide can be grown on 4-inch wafers via a thermal evaporation process and used as a top-gate oxide in two-dimensional molybdenum disulfide transistors.

    • Yury Yu. Illarionov
    • Theresia Knobloch
    • Tibor Grasser
    News & Views
    Nature Electronics
    Volume: 4, P: 870-871

  • The stability of graphene-based field-effect transistors with amorphous aluminium oxide serving as the top-gate oxide can be improved by tuning the Fermilevel of the two-dimensional channel material such that it maximizes the energy distance between the charge carriers in the channel and the defect bands in the gate oxide.

    • Theresia Knobloch
    • Burkay Uzlu
    • Tibor Grasser
    ResearchOpen Access
    Nature Electronics
    Volume: 5, P: 356-366

  • High-integration-density 2D–CMOS hybrid microchips for memristive applications are made demonstrating in-memory computation and electrical response suitable for the implementation of spiking neural networks representing an advance towards integration of 2D materials in microelectronic products and memristive applications.

    • Kaichen Zhu
    • Sebastian Pazos
    • Mario Lanza
    ResearchOpen Access
    Nature
    Volume: 618, P: 57-62

  • This Perspective assesses the performance limits of hexagonal boron nitride when used as a gate insulator in complementary metal–oxide–semiconductor (CMOS) devices based on two-dimensional materials, concluding that due to excessive leakage currents, the material is unlikely to be suitable for use in ultrascaled CMOS devices.

    • Theresia Knobloch
    • Yury Yu. Illarionov
    • Tibor Grasser
    Reviews
    Nature Electronics
    Volume: 4, P: 98-108

  • The lack of scalable, high-quality insulators is a major problem hindering the progress on electronic devices built from 2D materials. Here, the authors review the current state-of-the-art and the future prospects of suitable insulators for 2D technologies.

    • Yury Yu. Illarionov
    • Theresia Knobloch
    • Tibor Grasser
    ReviewsOpen Access
    Nature Communications
    Volume: 11, P: 1-15

  • This Review examines the development of field-effect transistors based on two-dimensional materials and considers the challenges that need to be addressed for the devices to be incorporated into very large-scale integration (VLSI) technology.

    • Saptarshi Das
    • Amritanand Sebastian
    • Rajendra Singh
    Reviews
    Nature Electronics
    Volume: 4, P: 786-799