Fig. 1: The structure sketch and passivation improvement of double-sided p-type TOPCon structures. | Nature Communications

Fig. 1: The structure sketch and passivation improvement of double-sided p-type TOPCon structures.

From: Highly passivated TOPCon bottom cells for perovskite/silicon tandem solar cells

Fig. 1

a Effective carrier lifetime curves and (b) illumination intensity-dependent iVOC curves of control (in black) and target (in red) samples. The insert in (a) is a structure sketch of double-sided p-type TOPCon structure on textured wafers. The promotion of textured p-type TOPCon structure passivation by optimizing processes step by step: (c) extending oxidation time, (d) elevating 30 min annealing temperature, (e) extending 920 °C annealing dwell time, and (f) increasing hydrogenated AlOx thickness. The solid curves with closed symbols are for iVOC and hollow columns are for J0,s. The added values are iVOCs and corresponding J0,ss. The “N2 + O2” refers to 500 sccm N2 + 500 sccm O2.

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