Fig. 3: The dependance of passivation sample chemical and physical properties on oxidation conditions. | Nature Communications

Fig. 3: The dependance of passivation sample chemical and physical properties on oxidation conditions.

From: Highly passivated TOPCon bottom cells for perovskite/silicon tandem solar cells

Fig. 3

The influence of oxidation temperature (left column), oxidation time (middle column), and oxidation ambient (right column) on (a–c) Si chemical state in SiOx, (d–f) interface state density at SiOx/c-Si, and (g–i) boron in-diffusion profile. The “N2 + O2” in (c) refers to 500 sccm N2 + 500 sccm O2. The inserted sketch in (f) shows sample structure for C–V test. The “J0,Auger_calculated” in (g) represents Auger recombination rate calculated using in-diffusion profiles in c-Si.

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