Fig. 3: Temperature and B field dependences at v = −3.
a In the T-v diagram with D = −0.3 V/nm, the resistance peak at v = −3 gradually decreases and almost vanishes at 1.5 K. At v = −1, a similar decrease in resistance is observed but the peak remains significant at low temperature. In contrast, the peak at v = −2 grows stronger. b Line cut from a at various temperatures. Hall carrier density is plotted as a function of temperature (c) and in-plane magnetic field (d) at v = −3 and D = −0.3 V/nm. Carrier reset manifested as a dip is maximized at T = 7.5 K (c) or B// ~ 11.96 T (Btotal = 12 T). With increasing in-plane magnetic fields, the correlated peak at v = -3 emerges at low temperature (T = 1.5 K in e) or is significantly enhanced at higher temperature (T = 12.5 K in f). The peak position (black dot) is shifted gradually towards v = -3 in B// fields (e); whenever it was shifted to v = −3 by rising temperature, the position would be fixed, regardless of B// fields (f).
