Fig. 3: Vacancy characterization in pure Cu2Se and Cu2Se/Sn0.96Pb0.01Zn0.03Se composites.
From: Matrix plainification leads to high thermoelectric performance in plastic Cu2Se/SnSe composites
Atomic-resolution HAADF images of pure Cu2Se sample along [010] (a) and [110] (c) zone axes. Inset: Corresponding FFT images. Atomic configuration diagrams along [010] (b) and [110] (d) zone axes of Cu2Se. e Intensity mapping of Se of pristine Cu2Se sample. (f1-f4) Intensity mapping of different Cu sites relative to the surrounding Se atoms in pristine Cu2Se sample. g HADDF image of the Cu2Se/5 wt.% Sn0.96Pb0.01Zn0.03Se composite, showing Sn filling regions. (h1, h2) Intensity mapping of different Cu sites relative to the surrounding Se atoms in Cu2Se/Sn0.96Pb0.01Zn0.03Se composite. i, j Atomic intensity profile for the red line in h1 and all atoms in g, indicating the Sn filling in Cu2Se/5 wt.% Sn0.96Pb0.01Zn0.03Se composite.
