Extended Data Fig. 7: Gate dependence of DC and microwave response in the second device.
From: Superfluid stiffness of magic-angle twisted bilayer graphene
a, DC resistance R as a function of the backgate voltage VBG. Top axis represents the filling factor ν. Inset shows the optical microscope image of the second device. b, Microwave transmission coefficient |S21| versus VBG. The resonant frequency (bright line) shifts within the zero-resistance region in panel (a), near filling factors ν = ±2. The resonance remains essentially constant within the high resistance region. c, Differential resistance dV/dIDC as a function of VBG and DC bias current IDC.
