Extended Data Fig. 2: Model and simulation of the resonator with termination.
From: Superfluid stiffness of magic-angle twisted bilayer graphene
a, Model used for the microwave simulation, including the through line, resonator, termination, and backgate. The termination includes both the MATBG (resistance or inductance, depending on bias point) and the proximitized edge inductance (independent of bias point). See main text. b, Out-of-plane magnetic field dependence of the resonance of Bernal-stacked bilayer graphene biased near its charge neutrality point. c, Simulated |S21| as a function of ∆fr = fr − 3.8 GHz for different values of CBG of the model. d, Simulated resonance frequency as a function of 1/LTBG for different values of Lprx. CBG is fixed at 3 fF. e, Data in panel d, with the baseline resonance frequency subtracted. Dashed lines are the linear fit to the simulation data. Inset depicts the slope of the linear fit as a function of offset frequency fr0, which depends on Lprx. f,g, Simulations of possible series (f) and parallel (g) contact resistances between the MATBG and the resonator, ground, and leads. Our results are most consistent with superconducting contacts, i.e., zero series resistance and large parallel resistance.
