Extended Data Fig. 3
From: Silicon heterojunction back-contact solar cells by laser patterning
Effect of high-intensity illuminated annealing on N-contact. a, Vertical contact resistivity of i/n/ITO/Ag. b, Effective lifetime at ∆n = 5 × 1015 cm3 measured on samples symmetrically passivated by i-a-Si:H/n-a-Si:H, before and after high-intensity illuminated annealing. The top lines, bottom lines, lines in the box, and boxes represent maximum values, minimum values, median values, and 25–75% distributions, respectively.
