Table 1 Summary of extracted parameters of density of states.

From: Fast and slow transient charging of Oxide Semiconductor Transistors

Gate Insulator

N TA (cm−3eV−1)

kT TA (eV)

N DA (cm−3eV−1)

kT DA (eV)

Si3N4

5.8 × 1018

0.06

3.9 × 1017

0.5

SiO2

2.3 × 1018

0.08

2.5 × 1017

0.5

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