Fig. 2: Electrical transport of chlorine doped Co₃Sn₂S₂.

a Temperature-dependent resistivities of intrinsic and doped crystals from 2 K to 300 K. b Magnetoresistance (MR) of Cl-doped and undoped Co₃Sn₂S₂ at 2 K. A nine-fold increase is realized after doping, due to a stronger compensation effect. The raw curves at 2 K for both doped and undoped crystals are shown in Supplementary Fig. 2. c Ordinary Hall resistivities of intrinsic and doped crystals at 2 K. d MR of the Cl-doped crystal from 2 K to 60 K. The MR gradually disappears with an increasing temperature. Above 60 K, the MR becomes negligible. A two-carrier fitting is applied for the field dependent electrical conductivity acquired from the field-dependent resistivities with the resolved carrier concentrations and mobilities shown in e and f respectively. An electron concentration of 5 × 10¹⁹ cm⁻³ is resolved, along with a mobility of 4000 cm²V⁻¹s⁻¹ at 2 K in Cl-doped sample, exhibiting the effectiveness of Cl-doping. Assuming each Cl contribute 1 electron to the system, 0.46% of Cl are expected to be doped into the system.