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2D bismuth oxyselenide semiconductor for future electronics

Nature Reviews Electrical Engineering (2025)Cite this article

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Abstract

The continuous downscaling of silicon transistors has driven exponential improvements in computing performance and energy efficiency, but sub-10 nm channel lengths pose fundamental challenges in speed and power consumption. Emerging materials and architectures offer promising pathways for further miniaturization. Bismuth oxyselenide (Bi2O2Se), an air-stable 2D semiconductor, exhibits high mobility, a suitable bandgap and a native high-κ oxide (Bi2SeO5), resembling silicon and its SiO2 counterpart. These properties suggest compatibility with industrial processes, positioning Bi2O2Se for next-generation high-performance computing. This Review summarizes recent advances in material synthesis, wafer-scale integration and device architectures, highlighting key challenges in the lab-to-fab transition. Finally, a roadmap is proposed to guide future innovations in ultra-scaled, energy-efficient electronics.

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Fig. 1: Channel engineering based on 2D Bi2O2Se for future transistors.
Fig. 2: Key developments in wafer-scale synthesis of 2D Bi2O2Se crystals.
Fig. 3: High-κ native-oxide dielectric integration for 2D Bi2O2Se.
Fig. 4: Key developments of high-performance 2D Bi2O2Se-based transistors.
Fig. 5: Key developments and perspective of multifunctional 2D Bi2O2Se-based devices for monolithic 3D integration.
Fig. 6: Roadmap for 2D Bi2O2Se towards future chip applications.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (22432001 to H.P., 21920102004 to H.P., 22205011 to C.T. and 92164205 to C.T.), National Key Research & Development Program (2022YFA1204900 to H.P. and 2021YFA1202901 to C.T.), Beijing National Laboratory for Molecular Sciences (BNLMS-CXTD-202001 to H.P.) and the Tencent Foundation (The XPLORER PRIZE to H.P.).

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  1. These authors contributed equally: Congwei Tan, Junchuan Tang, Xin Gao.

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  1. Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China

    Congwei Tan, Junchuan Tang, Xin Gao, Chengyuan Xue & Hailin Peng

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H.P. and C.T. provided innovative ideas for the article. C.T. researched data for this article. C.T., J.T., X.G. and H.P. co-wrote the manuscript. All authors provided suggestions for revisions and improvements to the Review.

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Tan, C., Tang, J., Gao, X. et al. 2D bismuth oxyselenide semiconductor for future electronics. Nat Rev Electr Eng (2025). https://doi.org/10.1038/s44287-025-00179-1

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