Magnetic random access memory (MRAM) exhibits remarkable device endurance, while also offering potential operation speed and energy efficiency improvements compared to conventional random access memory. However, challenges remain, both in terms of efficiency, and miniaturization. Here, Wang et al demonstrate a van der Waals (vdW) based spin-orbit torque switching, in a Fe3GeTe2/Bi2Te3 heterostructure, paving the way for thinner and higher efficiency spin-orbit torque based vdW MRAM.
- Haiyu Wang
- Hao Wu
- Weisheng Zhao