Vertical field-effect transistors (VFETs) have potential for the realization of ultra-scaled devices, but their fabrication is usually limited by trade-offs between scalability and channel length. Here, the authors report a large-scale transfer method to realize indium gallium zinc oxide/graphene VFETs with van der Waals metallic contacts and reduced channel length.
- Xiaokun Yang
- Rui He
- Yuan Liu
