We suggest synaptic devices using cation migration along thickness direction in a new class of 2D layered materials. An electrochemically active metal, such as Ag and Cu, is used for the operation of the synaptic device and chromium thiophosphate (CrPS4) single crystal is used as an electrolyte material. Multi-stable resistive states, short-term plasticity, and long-term potentiation are observed by controlling external voltage pulse with height smaller than 0.3 V. Given that simple mechanical exfoliation can generate very thin CrPS4 layers, the vertical Ag/CrPS4/Au capacitor offers a promising inorganic synaptic device compatible with next-generation flexible neuromorphic technology.
- Mi Jung Lee
- Sangik Lee
- Bae Ho Park
