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Few-layer-thick 2D materials offer desirable electronic, thermal and mechanical properties, but their large-scale layer-controlled synthesis is still challenging. Here, the authors report an edge-feeding synchronous epitaxial growth method to synthesize homogeneous A3-sized graphene films with controlled thickness between 2 and 7 layers.

Graphene has the high carrier mobility and short photoresponse time required for efficient photodetection, but broad and weak optical absorption are severe drawbacks. Here, the authors show that twisted bilayer graphene with van Hove singularities exhibits a strong light-matter interaction and selectively enhanced photocurrent generation.

An atomically thin high-κ gate dielectric of Bi₂SeO₅ can be formed via layer-by-layer oxidization of an underlying two-dimensional semiconductor, allowing high-performance field-effect transistors and inverters to be fabricated.

Thin films of a single-crystal dielectric—antimony oxide—can be epitaxially grown at wafer scales on graphene-covered copper surfaces and then used to transfer dielectric/graphene stacks, or be integrated as a two-dimensional dielectric onto other materials.

A multi-layer wafer-scale 2D gate-all-around system with an atomically smooth interface fabricated via epitaxial monolithic 3D integration shows good performance and power efficiency, holding promise for the forthcoming ångström technology node.

Direct growth of graphene on h-BN is desired to improve device performance. Here, the authors demonstrate the direct growth of large-area and continuous graphene/h-BN vertical heterostructures via a co-segregation approach.

Combination of p- and n-doped graphene is important in optoelectronic applications, but spatially selective doping of graphene is challenging. This work reports large-scale growth of graphene monolayers with spatially modulation doping and built-in single-crystalline p–n junctions.

Nanoporous two-dimensional materials have been considered ideal platforms for separating molecules and ions. Now, porous graphene membranes have been scaled up with low cost, uniform pores and high yield, enabling an attractive CO₂/N₂ separation performance with a near-100% success rate.

Two-dimensional (2D) bismuth oxyselenide crystals with suitable electronic band-gap and ultrahigh carrier mobility enable near-infrared photodetection. Here, the authors report an infrared photodetector based on 2D-bismuth oxyselenide with high responsivity, ultrafast photoresponse of ~ 1 ps at room temperature and a detectable frequency limit of up to 500 GHz.

Air-water interface hinders cryo-EM reconstruction and achievable resolution. Here, a superstructure called GSAMs is developed to alleviate the air-water interface effect and improve the efficiency of cryo-EM analysis.

Transparent conductive electrodes are widely used in modern optoelectronic devices, but they are rarely transparent in the near-infrared, limiting their use. Nanostructured bismuth selenide, a topological insulator, is now shown to be a flexible near-infrared transparent electrode.

This Review explores Bi₂O₂Se as a promising 2D semiconductor for next-generation computing, highlighting its high mobility, suitable bandgap and native high-κ oxide, which enables wafer-scale integration and compatibility with industrial processes, while addressing key challenges in the lab-to-fab transition and proposing a roadmap for ultra-scaled, energy-efficient electronics.

In Bi₂O₂Se thin films, the local inversion-symmetry breaking in two sectors of the [Bi₂O₂]²⁺ layer yields opposite Rashba spin polarizations, which compensate each other and give rise to the hidden Rashba effect. Hence, the films exhibit only even-integer quantum Hall states, but there is no sign of odd-integer states.

Here, trace detection of NO2 is achieved with a 2D Schottky-junction Bi₂O₂Se gas sensor. Simultaneous signals allow for detection in the ppt range, and impedance angle analysis allows for molecular specificity.

Analyses on a newly assembled, nearly complete genome of Ginkgo biloba revealed the cause of genome expansion and candidate genes associated with the formation of spermatophore flagellum in ginkgo, advancing our understanding about gymnosperm evolution.

Bilayer graphene (BLG) is promising for optoelectronic applications due to its tunable bandgap, but its large-area growth on Cu substrates is still challenging. Here, the authors demonstrate the fast synthesis of high-coverage meter-scale BLG on commercial Cu foils by introducing CO₂ during the growth.

Xu et al. report reconfigurable phototransistors based on MAPbI₃/Bi₂O₂Se heterostructure, with momentum conservation promotes hot carrier extraction and interlayer carrier transport. Heterotransistor array enables traffic light signal detection under dim light, assisted by YOLOv4 neural network.

Here, the authors report a polymer-free transfer method to fabricate suspended 2D materials with high intactness and thermal conductivity, facilitating the application of graphene grids for high-resolution electron microscopy.

The synthesis of wafer-scale ultraflat single-crystal hexagonal boron nitride film is realized by strong coupling to a Cu_0.8Ni_0.2(111)/sapphire wafer, providing a potential method for industry-compatible high-κ dielectric integration in two-dimensional electronics.

Single-crystal graphene can be grown on a copper foil at a rate of 60 μm s^-1 by using an adjacent oxide substrate that continuously supplies oxygen to the surface of the copper catalyst.

The ultraviolet-assisted intercalative oxidation of high-mobility two-dimensional semiconductor Bi₂O₂Se can be used to create a single-crystalline native oxide dielectric—β-Bi₂SeO₅—that can yield top-gated transistors with an equivalent oxide thickness of 0.41 nm.

The emergence of moiré superlattices in twisted two-dimensional halide perovskites has been reported, revealing the emergence of localized bright excitons with enhanced emissions and trapped charge carriers.

Here, the authors report the ledge-guided epitaxial growth of high-density 2D Bi₂O₂Se fin arrays and their application for the realization of 2D multi-channel fin field-effect transistors, showing improved on-state currents as the number of integrated channels is increased.

Silicon-integrated graphene photodetectors exhibit promising bandwidths at telecom wavelengths, but their responsivity is usually limited. Here, the authors report the wafer-scale fabrication of waveguide-integrated detectors based on twisted bilayer graphene, showing responsivities up to 0.65 A/W and 3-dB bandwidths >65 GHz.

High-resolution electron microscopy requires robust and noise-free substrates to support the specimens. Here, the authors present a polymer- and transfer-free direct-etching method for fabrication of graphene grids with ultraclean surfaces and demonstrate cryo-EM at record high resolution.

The intrinsic properties of graphene and the resulting device performance are hindered by the impurities produced during the synthesis process. Here, the authors elucidate the origin of contaminations in CVD-grown graphene and devise a strategy towards the scalable production of ultra-clean graphene with >99% clean regions and low contact resistance.

Here, the authors use high-resolution electron energy-loss spectroscopy to study the phonon dispersion of monolayer hexagonal boron nitride. They observe that the longitudinal optical (LO) and transverse optical (TO) phonons at the Brillouin zone centre exhibit no energy splitting, contrary to the conventional LO-TO splitting seen in bulk materials.

The existence of topological conducting surfaces on insulators has been demonstrated by angular photoemission spectroscopy, but the number of transport experiments on these systems have so far been scarce. Transport evidence of topological surface states is now shown in Bi₂Se₃ nanoribbons through the observation of Aharonov–Bohm oscillations.

The electrical, optical and mechanical properties of nanowires depend on their morphology. Nanowires that possess both chirality and a branched structure may therefore possess new material properties. Such nanowires can be formed by vapour–liquid–solid branching from a central PbSe nanowire with an axial screw dislocation.

Air-stable, non-encapsulated Bi₂O₂Se ultrathin films grown by chemical vapour deposition display high electron mobility and exceptional semiconducting transport properties, making the observation of quantum oscillations possible and suggesting potential applications in electronics.

Here the authors combine functional and structural work to show that METTL4 functions as U2 snRNA m6Am RNA methyltransferase supporting N6-methylation of 2’-O-methyladenosine in Arabidopsis.

Air-water interface and preferential orientation problems are crucial challenges in cryo-EM specimen preparation. Here, the authors utilize graphene-coated EM grids functionalized by salts with various electrostatic properties, successfully overcoming preferred orientation.

This paper shows that the uniformity of vitreous ice thickness relies on the surface flatness of the supporting film, and presents a method to use ultraflat graphene as the support for cryo-EM specimen preparation.

Wong and colleagues show that LKB1-deficient lung tumors are sensitive to autophagy inhibition, which can restore impaired antigen presentation and antitumor immune responses, and propose dual targeting of ULK1 and PD-1 for these tumors.

The epitaxial synthesis of high-density, vertically aligned arrays of two-dimensional (2D) fin-oxide heterostructures is described, enabling the fabrication of 2D fin field-effect transistors with high electron mobility and desirable low-power specifications.

Reliable transfer techniques are critical for the integration of 2D materials with arbitrary substrates. Here, the authors describe a method to transfer 4-inch and A4-sized defect-free graphene films onto rigid and flexible substrates with controllable conformal contact, leading to improved electrical properties and uniformity.

Defect-free integration of 2D materials onto semiconductor wafers is desired to implement heterogeneous electronic devices. Here, the authors report a method to transfer high-quality graphene on target wafers via gradient surface energy modulation, leading to improved structural and electronic properties.

Janus materials have distinct chemical functionalities on opposite faces. Zhang et al.report that a two-step covalent functionalisation and poly(methyl methacrylate)-mediated transfer process facilitates the synthesis of nonsymmetrically modified single-layer graphene.

High-volume, low-cost production of graphene is pivotal for the industrial advance of this 2D material. Here, the authors make use of naturally occurring diatomite as a 3D substrate for graphene growth, obtaining non-planar porous graphene structures after removal of the silica templates.

Two-dimensional chalcogenides offer great potential in electronics, but accurate control of their growth is difficult. Here, the authors combine microintaglio printing and van der Waals epitaxy to pattern various large-area arrays of single-crystal chalcogenides with remarkable properties.

Large-size single-crystal van der Waals layered Bi₂SeO₅ has been synthesized with a high dielectric constant and high breakdown field strength for two-dimensional electronics applications.

A versatile methodology to detect topological quasiparticles by transport measurements remains an open problem. Here, the authors propose and experimentally observe the temperature dependence of the quantum oscillation frequency as a signature of non-trivial band topology.