A two-terminal self-rectfying TaOy/Nanoporous TaOx memristor synapse was fabricated based on anodization process. The device exhibits high non-linearity, low synapse-coupling (S.C), acceptable endurance, sweeping and retention stability, as well as essential synaptic functions such as long-term plasticity and spiking-timing-dependent-plasticity. Furthermore, crossbar array consisting of the only designed device without any selector shows relatively well-defined switching parameters with acceptable cell uniformity and capability of suppressing undesired pathways. The effect of S.C on recognition accuracy of MNIST patterns was also simulated for the first time. Based on experimental average S.C value, the device exhibited the high accuracy comparable to S.C = 0
- Sanghyeon Choi
- Seonghoon Jang
- Gunuk Wang
